1. A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique. (May 2015) Authors: Tsui, Bing-Yue; Shih, Jhe-Ju; Lin, Han-Chi; Lin, Chiung-Yuan Journal: Solid-state electronics Issue: Volume 107(2015) Page Start: 40 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗