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11. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes. (1st January 2016)

12. Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing. (14th April 2020)

13. Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing. (20th May 2020)

18. Effects of erbium doping of indium tin oxide electrode in resistive random access memory. (18th February 2016)