1. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes. (10th February 2016) Authors: Pan, Chih-Hung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Liang, Shu-Ping; Lin, Chih-Yang; Chen, Min-Chen; Chen, Po-Hsun; Syu, Yong-En; Huang, Hui-Chun; Sze, Simon M. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 5(2016) Page Start: Q115 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes. (1st January 2016) Authors: Pan, Chih-Hung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Liang, Shu-Ping; Lin, Chih-Yang; Chen, Min-Chen; Chen, Po-Hsun; Syu, Yong-En; Huang, Hui-Chun; Sze, Simon M. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 5(2016) Page Start: Q115 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effects of erbium doping of indium tin oxide electrode in resistive random access memory. (18th February 2016) Authors: Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. Journal: Applied physics express Issue: Volume 9:Number 3(2016:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗