Author/Creator: Li, P G - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Li, P G

1. Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties. (8th March 2017)

Authors:: Cui, W; Zhao, X L; An, Y H; Guo, D Y; Qing, X Y; Wu, Z P; Li, P G; Li, L H; Cui, C; Tang, W H
Journal:: Journal of physics
Issue:: Volume 50:Number 13(2017)
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Record Type:: Journal Article
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2. Fabrication of β-Ga2O3/ZnO heterojunction for solar-blind deep ultraviolet photodetection. (30th January 2017)

Authors:: Guo, D Y; Shi, H Z; Qian, Y P; Lv, M; Li, P G; Su, Y L; Liu, Q; Chen, K; Wang, S L; Cui, C; Li, C R; Tang, W H
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 3(2017:Mar.)
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Record Type:: Journal Article
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3. Influence of oxygen vacancies on the photoresponse of β-Ga2O3/SiC n–n type heterojunctions. (24th June 2016)

Authors:: An, Y H; Guo, D Y; Li, S Y; Wu, Z P; Huang, Y Q; Li, P G; Li, L H; Tang, W H
Journal:: Journal of physics
Issue:: Volume 49:Number 28(2016)
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Record Type:: Journal Article
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4. Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure. (1st November 2013)

Authors:: Shen, J X; Qian, H Q; Zhang, Y; Wang, G F; Shen, J Q; Wang, S L; Cui, C; Li, P G; Lei, M; Tang, W H
Journal:: Materials technology
Issue:: Volume 28:Number 6(2013)
Page Start:: 375
Record Type:: Journal Article
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5. Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure. (November 2013)

Authors:: Shen, J X; Qian, H Q; Zhang, Y; Wang, G F; Shen, J Q; Wang, S L; Cui, C; Li, P G; Lei, M; Tang, W H
Journal:: Materials technology
Issue:: Volume 28:Number 6(2013)
Page Start:: 375
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗