1. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2. (13th April 2018) Authors: Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia Journal: Nanotechnology Issue: Volume 29:Number 24(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗