1. A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures. Issue 4 (19th February 2020) Authors: Cho, Jong-Hoi; Lim, Seung-Hyuk; Jang, Min-Ho; Lee, Chulwon; Yeo, Hwan-Seop; Sim, Young Chul; Kim, Je-Hyung; Matta, Samuel; Alloing, Blandine; Leroux, Mathieu; Park, Seoung-Hwan; Brault, Julien; Cho, Yong-Hoon Journal: Nanoscale advances Issue: Volume 2:Issue 4(2020) Page Start: 1449 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates. (1st November 2016) Authors: Khoury, Michel; Vennéguès, Philippe; Leroux, Mathieu; Delaye, Vincent; Feuillet, Guy; Zúñiga-Pérez, Jesus Journal: Journal of physics Issue: Volume 49:Number 47(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High temperature electrical transport study of Si-doped AlN. (October 2016) Authors: Contreras, Sylvie; Konczewicz, Leszek; Ben Messaoud, Jaweb; Peyre, Hervé; Al Khalfioui, Mohamed; Matta, Samuel; Leroux, Mathieu; Damilano, Benjamin; Brault, Julien Journal: Superlattices and microstructures Issue: Volume 98(2016) Page Start: 253 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters. (6th April 2016) Authors: Brault, Julien; Matta, Samuel; Ngo, Thi-Huong; Korytov, Maxim; Rosales, Daniel; Damilano, Benjamin; Leroux, Mathieu; Vennéguès, Philippe; Al Khalfioui, Mohamed; Courville, Aimeric; Tottereau, Olivier; Massies, Jean; Gil, Bernard Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Photoluminescence properties of (Al, Ga)N nanostructures grown on Al0.5Ga0.5N (0001). (February 2018) Authors: Matta, Samuel; Brault, Julien; Ngo, Thi-Huong; Damilano, Benjamin; Leroux, Mathieu; Massies, Jean; Gil, Bernard Journal: Superlattices and microstructures Issue: Volume 114(2018) Page Start: 161 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Ultraviolet light emitting diodes using III-N quantum dots. (15th November 2016) Authors: Brault, Julien; Matta, Samuel; Ngo, Thi-Huong; Rosales, Daniel; Leroux, Mathieu; Damilano, Benjamin; Khalfioui, Mohamed Al; Tendille, Florian; Chenot, Sébastien; De Mierry, Philippe; Massies, Jean; Gil, Bernard Journal: Materials science in semiconductor processing Issue: Volume 55(2016:Nov.) Page Start: 95 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Ultraviolet light emitting diodes using III-N quantum dots. (15th November 2016) Authors: Brault, Julien; Matta, Samuel; Ngo, Thi-Huong; Rosales, Daniel; Leroux, Mathieu; Damilano, Benjamin; Khalfioui, Mohamed Al; Tendille, Florian; Chenot, Sébastien; De Mierry, Philippe; Massies, Jean; Gil, Bernard Journal: Materials science in semiconductor processing Issue: Volume 55(2016:Nov.) Page Start: 95 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗