1. AlN metal–semiconductor field-effect transistors using Si-ion implantation. (6th March 2018) Authors: Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications. (25th September 2018) Authors: Lemettinen, Jori; Okumura, Hironori; Palacios, Tomás; Suihkonen, Sami Journal: Applied physics express Issue: Volume 11:Number 10(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗