1. Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition. (11th June 2022) Authors: Zeghouane, Mohammed; Hijazi, Hadi; Bassani, Franck; Lefevre, Gauthier; Martinez, Eugenie; Luciani, Thierry; Gentile, Pascal; Dubrovskii, Vladimir G; Salem, Bassem Journal: Nanotechnology Issue: Volume 33:Number 24(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Issue 5 (28th December 2021) Authors: Legallais, Maxime; Lefevre, Gauthier; Martin, Simon; Labau, Sébastien; Bassani, Franck; Pélissier, Bernard; Baron, Thierry; Vauche, Laura; Le Royer, Cyrille; Charles, Matthew; Vandendaele, William; Plissonnier, Marc; Gwoziecki, Romain; Salem, Bassem Journal: Advanced materials interfaces Issue: Volume 9:Issue 5(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Microstructure and oxidation resistance of relaxed epitaxial nickel thin films grown on (100)- and (110)-SrTiO3 substrates by pulsed laser deposition. Issue 34 (14th August 2018) Authors: Lefevre, Gauthier; Saitzek, Sébastien; Blanchard, Florent; Ferri, Anthony; Roussel, Pascal; Desfeux, Rachel; Sayede, Adlane Journal: CrystEngComm Issue: Volume 20:Issue 34(2018) Page Start: 5061 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement. (December 2021) Authors: Serra, Anna Lisa; Lefevre, Gauthier; Cueto, Olga; Bourgeois, Guillaume; Cyrille, Marie Claire; Navarro, Gabriele; Nowak, Etienne Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗