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1. Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors (Adv. Electron. Mater. 10/2022). (10th October 2022)

2. Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors. (9th March 2022)

3. Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties. Issue 3 (3rd July 2022)