1. Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness. Issue 9 (12th July 2017) Authors: Chen, Yu-Min; Rudawski, Nicholas G.; Lambers, Eric; Orazem, Mark E. Journal: Journal of the Electrochemical Society Issue: Volume 164:Issue 9(2017) Page Start: C563 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness. Issue 9 (1st January 2017) Authors: Chen, Yu-Min; Rudawski, Nicholas G.; Lambers, Eric; Orazem, Mark E. Journal: Journal of the Electrochemical Society Issue: Volume 164:Issue 9(2017) Page Start: C563 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (1st January 2019) Authors: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (20th June 2019) Authors: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. (15th September 2018) Authors: Fares, Chaker; Ren, F.; Lambers, Eric; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 10(2018) Page Start: P519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. (1st January 2018) Authors: Fares, Chaker; Ren, F.; Lambers, Eric; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 10(2018) Page Start: P519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency. Issue 3 (29th November 2017) Authors: Zhou, Chenkun; Lin, Haoran; Tian, Yu; Yuan, Zhao; Clark, Ronald; Chen, Banghao; van de Burgt, Lambertus J.; Wang, Jamie C.; Zhou, Yan; Hanson, Kenneth; Meisner, Quinton J.; Neu, Jennifer; Besara, Tiglet; Siegrist, Theo; Lambers, Eric; Djurovich, Peter; Ma, Biwu Journal: Chemical science Issue: Volume 9:Issue 3(2018) Page Start: 586 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Luminescent zero-dimensional organic metal halide hybrids with near-unity quantum efficiency. Issue 3 (29th November 2017) Authors: Zhou, Chenkun; Lin, Haoran; Tian, Yu; Yuan, Zhao; Clark, Ronald; Chen, Banghao; van de Burgt, Lambertus J.; Wang, Jamie C.; Zhou, Yan; Hanson, Kenneth; Meisner, Quinton J.; Neu, Jennifer; Besara, Tiglet; Siegrist, Theo; Lambers, Eric; Djurovich, Peter; Ma, Biwu Journal: Chemical science Issue: Volume 9:Issue 3(2018) Page Start: 586 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3. (10th January 2019) Authors: Fares, Chaker; Ren, F; Lambers, Eric; Hays, David C; Gila, B P; Pearton, S J Journal: Semiconductor science and technology Issue: Volume 34:Number 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗