1. Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation. (18th August 2016) Authors: Labrot, Maxime; Cheynis, Fabien; Barge, David; Juhel, Marc; Müller, Pierre Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 29 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗