1. Effect of the Indium Compositions in Tri-Gate InxGa1−xAs HEMTs for High-Frequency Low Noise Application. (1st November 2022) Authors: Wang, Chun; Kuo, Che-Ning; Lin, Yueh-Chin; Hsu, Heng-Tung; Tsao, Yi-Fan; Lee, Ching-Ting; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗