Author/Creator: Kumar, Y.B.N. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Kumar, Y.B.N.

1. Device and circuit level performance analysis of novel InAs/Si heterojunction double gate tunnel field effect transistor. (June 2016)

Authors:: Ahish, S.; Sharma, Dheeraj; Vasantha, M.H.; Kumar, Y.B.N.
Journal:: Superlattices and microstructures
Issue:: Volume 94(2016)
Page Start:: 119
Record Type:: Journal Article
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2. Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor. (March 2017)

Authors:: Ahish, S.; Sharma, Dheeraj; Vasantha, M.H.; Kumar, Y.B.N.
Journal:: Superlattices and microstructures
Issue:: Volume 103(2017)
Page Start:: 93
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗