1. Improved performance of impact ionization MOSFETs by using dopingless concept and strained channel. (September 2017) Authors: Kumar, Mirgender; Park, Si-Hyun Journal: Superlattices and microstructures Issue: Volume 109(2017) Page Start: 763 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗