1. A 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs E‐mode pHEMT technology. Issue 7 (22nd February 2019) Authors: Lee, Hui Dong; Park, Jeongsoo; Kong, Sunwoo; Kim, Kwang‐Seon; Lee, Kwang Chun; Park, Bonghyuk; Kim, Jeong‐Geun Journal: Microwave and optical technology letters Issue: Volume 61:Issue 7(2019:Jul.) Page Start: 1706 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗