1. DLTS analysis of high resistive edge termination technique‐induced defects in GaN‐based Schottky barrier diodes. Issue 9 (31st March 2016) Authors: Koné, Sodjan; Cayrel, Frederic; Yvon, Arnaud; Collard, Emmanuel; Alquier, Daniel Journal: Physica status solidi Issue: Volume 213:Issue 9(2016:Sep.) Page Start: 2364 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗