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5. MOVPE growth of AlxGa1‐xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV‐LEDs. Issue 3 (22nd January 2014)

6. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. (March 2016)

7. Solar‐blind AlxGa1–xN MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1. Issue 3 (4th February 2014)