1. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read. Issue 38 (22nd September 2021) Authors: Mulaosmanovic, Halid; Kleimaier, Dominik; Dünkel, Stefan; Beyer, Sven; Mikolajick, Thomas; Slesazeck, Stefan Journal: Nanoscale Issue: Volume 13:Issue 38(2021) Page Start: 16258 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗