1. An In-Depth Study of the Boron and Phosphorous Doping of GeSn. (24th August 2021) Authors: Frauenrath, M.; Kiyek, V.; von den Driesch, N.; Veillerot, M.; Nolot, E.; Buca, D.; Hartmann, J.-M. Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗