1. Evaluation of Schottky barrier height on 4H-SiC m-face for Schottky barrier diode wall integrated trench MOSFET. (7th March 2017) Authors: Kobayashi, Yusuke; Ishimori, Hiroshi; Kinoshita, Akimasa; Kojima, Takahito; Takei, Manabu; Kimura, Hiroshi; Harada, Shinsuke Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗