1. Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures. (February 2018) Authors: Kim, Zin-Sig; Lee, Hyung-Seok; Na, Jeho; Bae, Sung-Bum; Nam, Eunsoo; Lim, Jong-Won Journal: Solid-state electronics Issue: Volume 140(2018) Page Start: 12 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗