1. Improvement of sensing margin and reset switching fail of RRAM. (June 2019) Authors: Park, Woo Young; Ju, Wonki; Ko, Young Seok; Kim, Soo Gil; Ha, Tae Jung; Lee, Jae Yeon; Park, Yong Taek; Kim, Kyung Wan; Lee, Jong Chul; Lee, Jong Ho; Moon, Joo Young; Lee, Bo Mi; Gyun, Byung Gu; Lee, Byoung-Ki; Kim, Jin Kook Journal: Solid-state electronics Issue: Volume 156(2019) Page Start: 87 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗