1. Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer. (29th June 2015) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Kim, Dong-Hwan; Han, Sang-Woo; Seo, Kwang-Seok; Cha, Ho-Young Journal: Semiconductor science and technology Issue: Volume 30:Number 8(2015:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer. (August 2015) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Kim, Dong-Hwan; Han, Sang-Woo; Seo, Kwang-Seok; Cha, Ho-Young Journal: Semiconductor science and technology Issue: Volume 30:Number 8(2015:Aug.) Page Start: 3393 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire. Issue 7 (4th December 2019) Authors: Choi, Uiho; Kim, Hyun-Seop; Lee, Kyeongjae; Jung, Donghyeop; Kwak, Taemyung; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Kang, Myoung-Jin; Seo, Kwang-Seok; Han, Min; Choi, Seokgyu; Lee, Sangmin; Cha, Ho-Young; Nam, Okhyun Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. (6th December 2017) Authors: Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo Journal: Semiconductor science and technology Issue: Volume 33:Number 1(2018:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT. (6th November 2019) Authors: Choi, Uiho; Lee, Kyeongjae; Kwak, Taemyung; Jung, Donghyeop; Jang, Taehoon; Nam, Yongjun; So, Byeongchan; Kim, Hyun-Seop; Cha, Ho-Young; Kang, Myoung-Jin; Seo, Kwang-Seok; Nam, Okhyun Journal: Japanese journal of applied physics Issue: Volume 58:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors. (August 2016) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors. (August 2016) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere. (9th October 2015) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Lee, Jung-Yeon; Seo, Kwang-Seok; Cha, Ho-Young Journal: Semiconductor science and technology Issue: Volume 30:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier. (November 2020) Authors: Kim, Hyun-Seop; Kang, Myoung-Jin; Jang, Won-Ho; Seo, Kwang-Seok; Kim, Hyungtak; Cha, Ho-Young Journal: Solid-state electronics Issue: Volume 173(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide. (September 2018) Authors: Kim, Hyun-Seop; Eom, Su-Keun; Seo, Kwang-Seok; Kim, Hyungtak; Cha, Ho-Young Journal: Vacuum Issue: Volume 155(2018) Page Start: 428 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗