1. Effects of CuO film thickness on electrical properties of CuO/ZnO and CuO/ZnS hetero-junctions. (December 2015) Authors: Chabane, L.; Zebbar, N.; Zeggar, M. Lamri; Aida, M.S.; Kechouane, M.; Trari, M. Journal: Materials science in semiconductor processing Issue: Volume 40(2015:Dec.) Page Start: 840 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of CuO film thickness on electrical properties of CuO/ZnO and CuO/ZnS hetero-junctions. (December 2015) Authors: Chabane, L.; Zebbar, N.; Zeggar, M. Lamri; Aida, M.S.; Kechouane, M.; Trari, M. Journal: Materials science in semiconductor processing Issue: Volume 40(2015:Dec.) Page Start: 840 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electrical study of ZnO film thickness effect on the evolution of interface potential barrier of ZnO/p-Si heterojunction: Contribution to transport phenomena study. (October 2021) Authors: Chabane, L.; Zebbar, N.; Trari, M.; Seba, Y.H.; Kechouane, M. Journal: Materials science in semiconductor processing Issue: Volume 133(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Negative capacitance in Aluminum/hydrogenated amorphous silicon nitride/n type crystalline silicon structure. (October 2015) Authors: Mokeddem, K.; Kechouane, M. Journal: Superlattices and microstructures Issue: Volume 86(2015) Page Start: 335 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Negative capacitance in Aluminum/hydrogenated amorphous silicon nitride/n type crystalline silicon structure. (October 2015) Authors: Mokeddem, K.; Kechouane, M. Journal: Superlattices and microstructures Issue: Volume 86(2015) Page Start: 335 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. On the turn-around phenomenon in n-MOS transistors under NBTI conditions. (July 2016) Authors: Benabdelmoumene, A.; Djezzar, B.; Chenouf, A.; Tahi, H.; Zatout, B.; Kechouane, M. Journal: Solid-state electronics Issue: Volume 121(2016) Page Start: 34 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. On the turn-around phenomenon in n-MOS transistors under NBTI conditions. (July 2016) Authors: Benabdelmoumene, A.; Djezzar, B.; Chenouf, A.; Tahi, H.; Zatout, B.; Kechouane, M. Journal: Solid-state electronics Issue: Volume 121(2016) Page Start: 34 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Study of morphological and electrical properties of the ZnO/p-Si hetero-junction: Application to sensing efficiency of low concentration of ethanol vapor at room temperature. (April 2020) Authors: Tata, S.; Chabane, L.; Zebbar, N.; Trari, M.; Kechouane, M.; Rahal, A. Journal: Materials science in semiconductor processing Issue: Volume 109(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗