1. A nanoscale silicon on insulator transistor with superior performance using dual material gate and retrograde/halo doping in source/drain sides. (March 2020) Authors: Karbalaei, Mohammad; Dideban, Daryoosh Journal: Journal of physics and chemistry of solids Issue: Volume 138(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping. (February 2016) Authors: Karbalaei, Mohammad; Dideban, Daryoosh Journal: Superlattices and microstructures Issue: Volume 90(2016) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping. (February 2016) Authors: Karbalaei, Mohammad; Dideban, Daryoosh Journal: Superlattices and microstructures Issue: Volume 90(2016) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Scheme for Silicon on Insulator Field Effect Transistor with Improved Performance using Graphene. (1st January 2019) Authors: Karbalaei, Mohammad; Dideban, Daryoosh Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 9(2019) Page Start: M85 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. A Scheme for Silicon on Insulator Field Effect Transistor with Improved Performance using Graphene. (21st August 2019) Authors: Karbalaei, Mohammad; Dideban, Daryoosh Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 9(2019) Page Start: M85 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Comparison of the I–V characteristics of a topological insulator quantum well resonant tunneling transistor and its conventional counterpart: A TCAD simulation study. (May 2019) Authors: Dideban, Daryoosh; Karbalaei, Mohammad Journal: Journal of physics and chemistry of solids Issue: Volume 128(2019) Page Start: 374 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior. (September 2021) Authors: Karbalaei, Mohammad; Dideban, Daryoosh; Ramezani, Zeinab; Sadegh Amiri, Iraj Journal: Journal of physics and chemistry of solids Issue: Volume 156(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗