Author/Creator: Kang, T.S. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Kang, T.S.

1. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. (March 2017)

Authors:: Whiting, P.G.; Holzworth, M.R.; Lind, A.G.; Pearton, S.J.; Jones, K.S.; Liu, L.; Kang, T.S.; Ren, F.; Xin, Y.
Journal:: Microelectronics and reliability
Issue:: Volume 70(2017)
Page Start:: 32
Record Type:: Journal Article
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2. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. (March 2017)

Authors:: Whiting, P.G.; Rudawski, N.G.; Holzworth, M.R.; Pearton, S.J.; Jones, K.S.; Liu, L.; Kang, T.S.; Ren, F.
Journal:: Microelectronics and reliability
Issue:: Volume 70(2017)
Page Start:: 41
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗