1. A thin film encapsulation layer fabricated via initiated chemical vapor deposition and atomic layer deposition. Issue 24 (27th May 2014) Authors: Kim, Bong Jun; Kim, Do Heung; Kang, Seung Youl; Ahn, Seong Deok; Im, Sung Gap Other Names: Knapp Brian guestEditor.; Kohl Paul A. guestEditor. Journal: Journal of applied polymer science Issue: Volume 131:Issue 24(2014:Dec. 15) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A thin film encapsulation layer fabricated via initiated chemical vapor deposition and atomic layer deposition. Issue 24 (27th May 2014) Authors: Kim, Bong Jun; Kim, Do Heung; Kang, Seung Youl; Ahn, Seong Deok; Im, Sung Gap; Knapp, Brian; Kohl, Paul A. Journal: Journal of applied polymer science Issue: Volume 131:Issue 24(2014:Dec. 15) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Improvement in nonvolatile memory operations for metal–ferroelectric–insulator–semiconductor capacitors using HfZrO2 and ZrO2 thin films as ferroelectric and insulator layers. (18th August 2022) Authors: Kim, Yeriaron; Kang, Seung Youl; Woo, Jiyong; Kim, Jeong Hun; Im, Jong-Pil; Yoon, Sung-Min; Moon, Seung Eon Journal: Journal of physics Issue: Volume 55:Number 33(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗