1. Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique. Issue 7 (25th November 2019) Authors: Yamamoto, Akio; Kanatani, Keito; Yoneda, Norifumi; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructures with high electron mobility (∼1500 cm2 V−1 s−1): Impacts of reactive-ion etching-damaged layer removal. (25th October 2018) Authors: Yamamoto, Akio; Kanatani, Keito; Makino, Shinya; Kuzuhara, Masaaki Journal: Japanese journal of applied physics Issue: Volume 57:Number 12(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗