1. Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes. (15th November 2017) Authors: Konishi, Kumiko; Kameshiro, Norifumi; Yokoyama, Natsuki; Shima, Akio; Shimamoto, Yasuhiro Journal: Japanese journal of applied physics Issue: Volume 56:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗