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2. Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification. (23rd March 2017)

3. Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature. (30th August 2021)

4. Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. (6th April 2017)

6. Vertical edge graphite layer on recovered diamond (001) after high‐dose ion implantation and high‐temperature annealing (Phys. Status Solidi B 9/2017). Issue 9 (14th September 2017)