1. Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry. (December 2022) Authors: Lohner, Tivadar; Németh, Attila; Zolnai, Zsolt; Kalas, Benjamin; Romanenko, Alekszej; Khánh, Nguyen Quoc; Szilágyi, Edit; Kótai, Endre; Agócs, Emil; Tóth, Zsolt; Budai, Judit; Petrik, Péter; Fried, Miklós; Bársony, István; Gyulai, József Journal: Materials science in semiconductor processing Issue: Volume 152(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗