Author/Creator: Juhel, M. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Juhel, M.

1. Hafnium Impurity Defects in Silicon: A Characterization. (16th October 2018)

Authors:: Mica, I.; Frascaroli, J.; Vangelista, S.; Caniatti, M.; Piagge, R.; Toia, F. F. R.; Juhel, M.; Polignano, M. L.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 10(2018)
Page Start:: P583
Record Type:: Journal Article
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2. Hafnium Impurity Defects in Silicon: A Characterization. (1st January 2018)

Authors:: Mica, I.; Frascaroli, J.; Vangelista, S.; Caniatti, M.; Piagge, R.; Toia, F. F. R.; Juhel, M.; Polignano, M. L.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 10(2018)
Page Start:: P583
Record Type:: Journal Article
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3. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016)

Authors:: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F.
Journal:: Solid-state electronics
Issue:: Volume 126(2016)
Page Start:: 163
Record Type:: Journal Article
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4. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016)

Authors:: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F.
Journal:: Solid-state electronics
Issue:: Volume 126(2016)
Page Start:: 163
Record Type:: Journal Article
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5. Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors. (June 2023)

Authors:: Brezza, E.; Deprat, F.; de Buttet, C.; Gauthier, A.; Gregoire, M.; Guiheux, D.; Guyader, V.; Juhel, M.; Berbezier, I.; Assaf, E.; Favre, L.; Chevalier, P.; Gaquière, C.; Defrance, N.
Journal:: Solid-state electronics
Issue:: Volume 204(2023)
Page Start:
Record Type:: Journal Article
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6. Point and extended defect interaction in low – high energy phosphorus implantation sequences. (2018)

Authors:: Mica, I.; Polignano, M.L.; Bacciaglia, P.; Brazzelli, D.; Cseh, D.; Galbiati, A.; Grasso, S.; Juhel, M.; Kiss, Z.T.; Monge Roffarello, P.; Tomezzoli, E.; Torti, A.M.
Journal:: Materials today
Issue:: Volume 5:Number 6(2018)Part 3
Page Start:: 14778
Record Type:: Journal Article
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7. Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon. (15th June 2022)

Authors:: Lespiaux, J.; Deprat, F.; Rodrigues Goncalves, B.; Souc, J.; Leverd, F.; Juhel, M.; Mattei, J.-G.; Giroud-Garampon, C.; Roman, A.; Magis, T.; Hartmann, J.M.
Journal:: Materials science in semiconductor processing
Issue:: Volume 144(2022)
Page Start:
Record Type:: Journal Article
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