Author/Creator: Jouha, Wadia - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Jouha, Wadia

1. Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). (18th March 2021)

Authors:: Coq Germanicus, Rosine; Lallemand, Florent; Chateigner, Daniel; Jouha, Wadia; Moultif, Niemat; Latry, Olivier; Fouchet, Arnaud; Murray, Hugues; Bunel, Catherine; Lüders, Ulrike
Journal:: Nano express
Issue:: Volume 2:Number 1(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation. Issue 2 (12th February 2020)

Authors:: Jouha, Wadia; El Oualkadi, Ahmed; Dherbécourt, Pascal; Masmoudi, Mohamed; Joubert, Eric
Journal:: IET circuits, devices & systems
Issue:: Volume 14:Issue 2(2020)
Page Start:: 222
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation. (November 2021)

Authors:: Jouha, Wadia; Richardeau, Frédéric; Azzopardi, Stephane
Journal:: Microelectronics and reliability
Issue:: Volume 126(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization. (November 2021)

Authors:: Jouha, Wadia; Richardeau, Frédéric; Azzopardi, Stephane
Journal:: Microelectronics and reliability
Issue:: Volume 126(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗