1. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. Issue 5 (29th December 2014) Authors: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Masuda, Satoshi; Joshin, Kazukiyo Journal: Physica status solidi Issue: Volume 212:Issue 5(2015:May) Page Start: 1153 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. Issue 5 (20th December 2015) Authors: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Joshin, Kazukiyo Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1259 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗