1. Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope. Issue 1 (July 2020) Authors: Trager-Cowan, C; Alasmari, A; Avis, W; Bruckbauer, J; Edwards, P R; Hourahine, B; Kraeusel, S; Kusch, G; Jablon, B M; Johnston, R; Martin, R W; Mcdermott, R; Naresh-Kumar, G; Nouf-Allehiani, M; Pascal, E; Thomson, D; Vespucci, S; Mingard, K; Parbrook, P J; Smith, M D Journal: IOP conference series Issue: Volume 891:Issue 1(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. (11th March 2019) Authors: Cai, Y; Yu, X; Shen, S; Zhao, X; Jiu, L; Zhu, C; Bai, J; Wang, T Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗