Author/Creator: Jiang, Jheng-Yi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Jiang, Jheng-Yi

1. Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation. (March 2023)

Authors:: Lin, Ya-Xun; Chao, Der-Sheng; Liang, Jenq-Horng; Jiang, Jheng-Yi; Huang, Chih-Fang
Journal:: Microelectronics and reliability
Issue:: Volume 142(2023)
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Record Type:: Journal Article
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2. Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs. (25th February 2019)

Authors:: Chao, Der-Sheng; Shih, Hua-Yu; Jiang, Jheng-Yi; Huang, Chih-Fang; Chiang, Ching-Yu; Ku, Ching-Shun; Yen, Cheng-Tyng; Lee, Lurng-Sheng; Hsu, Fu-Jen; Chu, Kuo-Ting; Hung, Chien-Chung; Lee, Chwan-Ying
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number SB(2019)
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Record Type:: Journal Article
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