1. Effect of lattice‐matched InAlGaN electron‐blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light‐emitting diodes. Issue 5 (22nd December 2015) Authors: Kim, Jeomoh; Ji, Mi‐Hee; Detchprohm, Theeradetch; Dupuis, Russell D.; Shervin, Shahab; Ryou, Jae‐Hyun Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1296 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗