1. Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers. (26th November 2018) Authors: Jeschke, J; Mogilatenko, A; Netzel, C; Zeimer, U; Weyers, M Journal: Semiconductor science and technology Issue: Volume 34:Number 1(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells. (20th February 2018) Authors: Jeschke, J; Martens, M; Hagedorn, S; Knauer, A; Mogilatenko, A; Wenzel, H; Zeimer, U; Enslin, J; Wernicke, T; Kneissl, M; Weyers, M Journal: Semiconductor science and technology Issue: Volume 33:Number 3(2018:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗