1. Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. (November 2016) Authors: Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 182 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. (November 2016) Authors: Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 182 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗