1. Tunable electronic properties of InSe by biaxial strain: from bulk to single-layer. (25th September 2019) Authors: Pham, Khang D; Vi, Vo T T; Thuan, Doan V; Phuong, Le T T; Hoa, Le T; Hieu, Nguyen V; Nguyen, Chuong V; Phuc, Huynh V; Jappor, Hamad R; Cuong, Nguyen Q; Hoi, Bui D; Hieu, Nguyen N Journal: Materials research express Issue: Volume 6:Number 11(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗