Search
Search Constraints
You searched for: Author/Creator Jang, Minsoo- Jang, Minsoo [remove] 5
- 621.31705 5
- Power electronics -- Periodicals 5
- DC‐DC power convertors -- zero current switching -- load flow 1
- Si -- SiC -- temperature 25 degC to 150 degC -- power 1.2 kW -- frequency 300 kHz -- enhanced reliability -- natural convection heatsink -- power semiconductors -- MOSFETs -- silicon metal‐oxide‐semiconductor field‐effect transistors -- thermal performance evaluations -- solar PV pre‐regulator -- DC‐DC boost converter -- heat extraction mechanisms -- thermal management -- principal reliability issues -- PCS -- power conditioning system -- PV energy system failures -- solar photovoltaic energy system failures -- thermal performance evaluation -- silicon carbide‐based hard‐switching boost‐converter 1
- high‐gain soft‐switching interleaved switched‐capacitor DC‐DC converter -- phase‐shedding technique -- ISC DC‐DC converter -- light load condition -- active interleaved converters -- input power level -- interleaved configuration -- modular converter characteristic -- pulsating input current -- voltage gain -- stray inductances -- magnetic component free design -- power 1.5 kW -- frequency 120 kHz 1
- performance evaluation -- DC‐DC power convertors -- zero voltage switching -- switching convertors -- zero current switching -- switches 1
- performance evaluation -- interleaved high‐gain converter configuration -- interleaved high‐gain DC‐DC converter -- IHG DC‐DC converter -- zero‐voltage switching -- zero‐current switching -- diode -- soft‐switching effect -- power 1 kW 1
- silicon compounds -- gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- frequency multipliers -- DC‐DC power convertors -- driver circuits -- power MOSFET 1
- silicon compounds -- wide band gap semiconductors -- silicon -- elemental semiconductors -- DC‐DC power convertors -- thermal engineering -- performance evaluation -- switching convertors -- photovoltaic power systems -- power generation reliability -- failure analysis -- solar power stations 1
- ultrafast‐MHz range driving circuit -- silicon carbide MOSFET -- frequency multiplier -- n‐type e‐gallium nitride FET technology -- silicon carbide metal oxide semiconductor field effect transistor -- switching frequency -- phase‐shifted pulse width modulation -- nonisolated DC‐DC boost converter -- two‐parallel‐connected gate driver -- power 600 W -- frequency 2 MHz -- frequency 5 MHz -- GaN -- SiC 1