1. Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy. Issue 15 (1st April 2022) Authors: Pierucci, Debora; Mahmoudi, Aymen; Silly, Mathieu; Bisti, Federico; Oehler, Fabrice; Patriarche, Gilles; Bonell, Frédéric; Marty, Alain; Vergnaud, Céline; Jamet, Matthieu; Boukari, Hervé; Lhuillier, Emmanuel; Pala, Marco; Ouerghi, Abdelkarim Journal: Nanoscale Issue: Volume 14:Issue 15(2022) Page Start: 5859 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001). (23rd November 2021) Authors: Bonell, Frédéric; Marty, Alain; Vergnaud, Céline; Consonni, Vincent; Okuno, Hanako; Ouerghi, Abdelkarim; Boukari, Hervé; Jamet, Matthieu Journal: 2D materials Issue: Volume 9:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer. (22nd January 2023) Authors: Khalil, Lama; Pierucci, Debora; Velez-Fort, Emilio; Avila, José; Vergnaud, Céline; Dudin, Pavel; Oehler, Fabrice; Chaste, Julien; Jamet, Matthieu; Lhuillier, Emmanuel; Pala, Marco; Ouerghi, Abdelkarim Journal: Nanotechnology Issue: Volume 34:Number 4(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe2 monolayer. (15th August 2018) Authors: Alvarez, Carlos J; Dau, Minh Tuan; Marty, Alain; Vergnaud, Celine; Le Poche, Helene; Pochet, Pascal; Jamet, Matthieu; Okuno, Hanako Journal: Nanotechnology Issue: Volume 29:Number 42(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. New approach for the molecular beam epitaxy growth of scalable WSe2 monolayers. (8th April 2020) Authors: Vergnaud, Céline; Dau, Minh-Tuan; Grévin, Benjamin; Licitra, Christophe; Marty, Alain; Okuno, Hanako; Jamet, Matthieu Journal: Nanotechnology Issue: Volume 31:Number 25(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Silicide formation during Mn doping of Ge/Si (001) self-assembled quantum dots. Issue 23 (6th December 2013) Authors: Kassim, J.; Nolph, Christopher A.; Jamet, Matthieu; Reinke, Petra; Floro, Jerrold A. Journal: Journal of materials research Issue: Volume 28:Issue 23(2013) Page Start: 3210 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Si. (7th May 2019) Authors: Vergnaud, Céline; Gay, Maxime; Alvarez, Carlos; Dau, Minh-Tuan; Pierre, François; Jalabert, Denis; Licitra, Christophe; Marty, Alain; Beigné, Cyrille; Grévin, Benjamin; Renault, Olivier; Okuno, Hanako; Jamet, Matthieu Journal: 2D materials Issue: Volume 6:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗