1. (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. (3rd July 2019) Authors: Shinohara, Keisuke; King, Casey; Regan, Eric; Gomez, M P; Bergman, Joshua; Carter, Andrew; Arias, Andrea; Urteaga, Miguel; Brar, Berinder; Page, Ryan; Chaudhuri, Reet; Islam, Moudud; Xing, Huili Grace; Jena, Debdeep Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗