Author/Creator: Isella, G - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Isella, G

1. In situ ohmic contact formation for n-type Ge via non-equilibrium processing. (4th October 2017)

Authors:: Prucnal, S; Frigerio, J; Napolitani, E; Ballabio, A; Berencén, Y; Rebohle, L; Wang, M; Böttger, R; Voelskow, M; Isella, G; Hübner, R; Helm, M; Zhou, S; Skorupa, W
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 11(2017:Nov.)
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Record Type:: Journal Article
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2. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing. (26th October 2017)

Authors:: Frigerio, J; Ballabio, A; Gallacher, K; Giliberti, V; Baldassarre, L; Millar, R; Milazzo, R; Maiolo, L; Minotti, A; Bottegoni, F; Biagioni, P; Paul, D; Ortolani, M; Pecora, A; Napolitani, E; Isella, G
Journal:: Journal of physics
Issue:: Volume 50:Number 46(2017)
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Record Type:: Journal Article
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3. Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates. (11th August 2015)

Authors:: Isa, F; Pezzoli, F; Isella, G; Meduňa, M; Falub, C V; Müller, E; Kreiliger, T; Taboada, A G; Känel, H von; Miglio, Leo
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 10(2015:Oct.)
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Record Type:: Journal Article
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4. Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates. (October 2015)

Authors:: Isa, F; Pezzoli, F; Isella, G; Meduňa, M; Falub, C V; Müller, E; Kreiliger, T; Taboada, A G; Känel, H von; Miglio, Leo
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 10(2015:Oct.)
Page Start:: 482
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗