1. 2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. (4th November 2019) Authors: Irekti, Mohamed-Reda; Lesecq, Marie; Defrance, Nicolas; Okada, Etienne; Frayssinet, Eric; Cordier, Yvon; Tartarin, Jean-Guy; De Jaeger, Jean-Claude Journal: Semiconductor science and technology Issue: Volume 34:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗