Author/Creator: Inoue, Akiyoshi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Inoue, Akiyoshi

1. High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer. (1st May 2022)

Authors:: Inoue, Akiyoshi; Tanaka, Sakura; Egawa, Takashi; Miyoshi, Makoto
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number SC(2022)
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Record Type:: Journal Article
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2. Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer. (October 2021)

Authors:: Miyoshi, Makoto; Inoue, Akiyoshi; Yamanaka, Mizuki; Harada, Hiroki; Egawa, Takashi
Journal:: Materials science in semiconductor processing
Issue:: Volume 133(2021)
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Record Type:: Journal Article
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