1. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs. (17th August 2014) Authors: Hussin, H.; Soin, N.; Bukhori, M. F.; Wan Muhamad Hatta, S.; Abdul Wahab, Y. Other Names: Lin Yo-Sheng Academic Editor. Journal: TheScientificWorldjournal Issue: Volume 2014(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. The Impact of Variation in Diameter and Dielectric Materials of the CNT Field-Effect Transistor. (1st February 2022) Authors: Abdul Hadi, M. F.; Hussin, H.; Soin, N. Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗