1. A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. (October 2016) Authors: Hung, Ching-Wen; Chang, Ching-Hong; Chen, Wei-Cheng; Chen, Chun-Chia; Chen, Huey-Ing; Tsai, Yu-Ting; Tsai, Jung-Hui; Liu, Wen-Chau Journal: Solid-state electronics Issue: Volume 124(2016) Page Start: 5 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. (October 2016) Authors: Hung, Ching-Wen; Chang, Ching-Hong; Chen, Wei-Cheng; Chen, Chun-Chia; Chen, Huey-Ing; Tsai, Yu-Ting; Tsai, Jung-Hui; Liu, Wen-Chau Journal: Solid-state electronics Issue: Volume 124(2016) Page Start: 5 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗