1. Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in "Buffer‐Free" AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors. Issue 8 (11th December 2022) Authors: Hult, Björn; Thorsell, Mattias; Chen, Jr-Tai; Rorsman, Niklas Other Names: Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor. Journal: Physica status solidi Issue: Volume 220:Issue 8(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗