Author/Creator: Huang, Zeyang - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Huang, Zeyang

1. 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics. (December 2021)

Authors:: Liu, Kai; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; Huang, Zeyang; He, Yunlong; Li, Ang; Zhao, Yaopeng; Mao, Wei; Hao, Yue
Journal:: Solid-state electronics
Issue:: Volume 186(2021)
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Record Type:: Journal Article
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2. Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors. Issue 16 (23rd June 2019)

Authors:: He, Yunlong; Huang, Zeyang; Zhang, Meng; Wu, Mei; Mi, Minhan; Wang, Chong; Yang, Ling; Zhang, Chunfu; Guo, Lixin; Ma, Xiaohua; Hao, Yue
Journal:: Physica status solidi
Issue:: Volume 216:Issue 16(2019)
Page Start:: n/a
Record Type:: Journal Article
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